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The aim of this research is to build single-electron transistors (SETs) in semiconductor materials.

Nanoelectronic devices can be realized in silicon-on-insulator (SOI) materials, in which we have created sub-10 nanometer SETs, also termed quantum dots, operating from low temperatures up to 300 Kelvin.

For investigating quantum computing we are building quantum dots using Gallium-Arsenide heterostructures (GaAs/AlGaAs). Coupled quantum dots can be understood as artificial molecules which have properties similar to real molecules, but with the advantage that the artificial molecule's potentials are tunable. Thus we can create and address molecular like modes, being understood as quantum bits.
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